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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION Part Number 2SK3113 2SK3113-Z Package TO-251 TO-252 FEATURES *Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) *Gate voltage rating 30 V *Low On-state resistance RDS(on) = 4.4 (MAX.) (VGS = 10 V, ID = 2.0 A) *Avalanche capability ratings ABSOLUTE MAXIMUM RATING (TA = 25C) Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25C) Drain current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 30 2.0 8.0 1.0 20 150 -55 to +150 2.0 2.7 3.5 V V A A W W C C A mJ V/ns Total power dissipation (TA = 25C) Total power dissipation (TC = 25C) Channel temperature Storage temperature Single avalanche current Single avalanche energy Diode recovery dv/dt Note3 Note3 IAS EAS dv/dt Note4 Notes 1. PW 10 s, Duty cycle 1 % 2. On glass epoxy board with 40 x 40 x1.6 mm 3. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V0 V 4. IF 1.0 A, Vclamp = 600 V, di/dt 100 A/s, TA = 25C The information in this document is subject to change without notice. Document No. D13336EJ1V0DS00 (1st edition) Date Published November 1998 NS CP (K) Printed in Japan (c) 1998 2SK3113 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) MIN. TYP. MAX. 100 10 UNIT TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 1.0 A VGS(on) = 10 V RG = 10 RL = 10 VDD = 450 V VGS = 10 V ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V di/dt = 50 A/s A A V S 2.5 0.5 3.3 290 60 5 7 2 22 9 9 2.4 2 0.9 0.9 2.0 3.5 | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) Trr Qrr 4.4 pF pF pF ns ns ns ns nC nC nC V s C TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RG = 10 RL VGS Wave Form VGS 0 10 % VGS(on) 90 % VDD ID 90 % 90 % ID BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td(on) ton tr td(off) toff 10 % tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 2SK3113 TYPICAL CHARACTERISTICS (TA = 25C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 5 4 3 2 1 VGS = 10 V 6V 8V FORWARD TRANSFER CHARACTERISTICS 100 ID - Drain Current - A ID - Drain Current - A Tch = 125 C 75 C 10 1.0 Tch = 25 C -25 C 0.1 VDS = 10 V Pulsed 15 0 30 VDS - Drain to Source Voltage - V 10 20 40 0 5 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S 5.0 100 VDS = 10 V Pulsed 4.0 10 Tch = -25 C 25 C 75 C 125 C 3.0 2.0 1 1.0 VDS = 10 V ID = 1 mA 0 -50 0 50 100 150 0.1 0.01 0.1 1.0 10 Tch - Channel Temperature - C ID - Drain Current - A RDS (on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 7 6 5 4 3 2 1 0 0 5 10 15 ID = 2.0 A 1.0 A Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 7 6 5 4 3 2 1 0 0.1 1 ID - Drain Current - A 10 VGS = 10 V 20 V VGS - Gate to Source Voltage - V 3 2SK3113 RDS (on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 9 8 7 6 5 4 3 2 1 VGS = 10 V 0 -50 0 50 100 150 1A ID = 2 A SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A 100 10 1.0 VGS = 10 V 0V Pulsed 1.5 0.1 0 0.5 1.0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 SWITCHING CHARACTERISTICS 10 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF td(off) 10 tf td(on) tr 1 VDD = 150 V VGS = 10 V RG = 10 1 ID - Drain Current - A 10 1 000 Ciss 100 Coss 10 VGS= 0 V f=1 MHz 1 10 Crss 100 1 0.1 0.1 0.1 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V 600 1 000 VDD = 450 V 300 V 150 V VGS 12 10 8 6 400 100 200 VDS 0 4 8 12 4 2 0 16 10 0.1 1.0 10 100 ID - Drain Current - A Qg - Gate Charge - nC 4 VGS - Gate to Source Voltage - V di/dt = 50 A/s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 800 ID = 2 A 14 2SK3113 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 40 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 35 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 80 60 40 20 0 0 Tch - Channel Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 TC = 25C Single Pulse ID - Drain Current - A 10 d( @ VG S ID(pulse) 0 =2 V) 10 0 s PW =1 0 s 1 S RD (on )L i te mi ID(DC) Po we r Di ss ipa tio n 10 m s 10 0 DC ms 1m s Lim ite d 0.1 1 10 100 1 000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-c)(t) - Transient Thermal Resistance - C/W Rth(CH-A) = 125 C/W 100 10 Rth(CH-C) = 6.25 C/W 1 0.1 Single Pulse 100 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s 0.01 10 5 2SK3113 100 IAS - Single Avalanche Energy - mJ SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 10 IAS = 2.0 A 1.0 RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25 C 100 1m 10m L - Inductive Load - H Energy Defrating Factor - % 100 80 60 40 20 0 25 VDD = 150 V RG = 25 VGS = 20V0V IAS 2.0A EAS = 2.7 mJ 0.1 10 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C 6 2SK3113 PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 1.5-0.1 +0.2 6.50.2 5.00.2 4 2.30.2 0.50.1 0.8 4.3 MAX. 6.50.2 5.00.2 4 1.5-0.1 +0.2 2.30.2 0.50.1 1.60.2 5.50.2 1 2 3 13.7 MIN. 7.0 MAX. 1 2 3 1.10.2 +0.2 0.5-0.1 2.3 2.3 0.5-0.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) +0.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain 0.75 Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 0.5 1.10.2 2.0 MIN. 5.50.2 10.0 MAX. 1.0 MIN. 1.5 TYP. 7 2SK3113 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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